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Power Transistors
2SD1707
Silicon NPN epitaxial planar type
Unit: mm
(0.7)
For power switching Complementary to 2SB1156
21.00.5
15.00.3 11.00.2
5.00.2 (3.2)
Features
* Low collector-emitter saturation voltage VCE(sat) * Satisfactory linearity of forward current transfer ratio hFE * Large collector current IC * Full-pack package which can be installed to the heat sink with one screw
3.20.1
15.00.2 (3.5) Solder Dip
2.00.2 1.10.1
2.00.1 0.60.2
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 130 80 7 20 30 100 3.0 150 -55 to +150 C C Unit V V V A A W
16.20.5
5.450.3 10.90.5 1 2 3
1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO IEBO hFE1 hFE2 Collector-emitter saturation voltage
*
Conditions IC = 10 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 3 A VCE = 2 V, IC = 10 A IC = 8 A, IB = 0.4 A IC = 20 A, IB = 2 A IC = 8 A, IB = 0.4 A IC = 20 A, IB = 2 A VCE = 10 V, IC = 0.5 A, f = 1 MHz IC = 8 A, IB1 = 0.8 A, IB2 = - 0.8 A VCC = 50 V
Min 80
Typ
Max
Unit V A A
10 50 45 90 30 0.5 1.5 1.5 2.5 20 0.5 2.0 0.2 260
hFE3 VCE(sat)1 VCE(sat)2 Base-emitter saturation voltage VBE(sat)1 VBE(sat)2 Transition frequency Turn-on time Storage time Fall time fT ton tstg tf
V
V
MHz s s s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q 90 to 180 P 130 to 260
SJD00211BED
Publication date: September 2003
1
2SD1707
PC Ta
120
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
20
10
TC=25C IB=200mA
VCE(sat) IC
(1) IC/IB=10 (2) IC/IB=20 TC=25C
Collector power dissipation PC (W)
100
(1)
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink
16
Collector current IC (A)
80
140mA
1
(1) (2)
12
120mA 100mA
60
8
80mA 60mA
40
0.1
20
(2) (3)
4
40mA 20mA
0
0
0 25 50 75 100 125 150
0
2
4
6
8
10
12
0.01 0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
10
VBE(sat) IC
100
hFE IC
IC/IB=10
VCE=2V
Base-emitter saturation voltage VBE(sat) (V)
IC/IB=10
1 000
10
Forward current transfer ratio hFE
TC=100C
1
TC=100C
100
25C -25C
1
TC=-25C 100C 25C
25C
0.1
-25C
10
0.1
0.01 0.1
1
10
0.01 0.01
0.1
1
10
1 0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
fT I C
Turn-on time ton , Storage time tstg , Fall time tf (s)
1000
VCE=10V f=1MHz Ta=25C
ton , tstg , tf IC
100
Pulsed tw=1ms Duty cycle=1% IC/IB=10(IB1=-IB2) VCC=50V TC=25C tstg
Safe operation area
100
ICP IC Non repetitive pulse TC=25C
Transition frequency fT (MHz)
Collector current IC (A)
100
10
10
t=10ms DC
t=1ms
10
1
ton tf
1
1
0.1
0.1
0.1 0.01
0.01
0.01
0.1
1
10
0
2
4
6
8
1
10
100
1 000
Collector current IC (A)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00211BED
2SD1707
Rth t
104
Note: Rth was measured at Ta=25C and under natural convection. (1)PT=10Vx0.2A(2W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink
Thermal resistance Rth (C/W)
103
102
(1)
10
(2)
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00211BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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